Tunneled intergrowth structures in the Ga2O3-In2O3-SnO2 system

D. D. Edwards*, T. O. Mason, W. Sinkler, L. D. Marks, K. R. Poeppelmeier, Z. Hu, J. D. Jorgensen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


The structures of several Ga2O3-In2O3-SnO2 phases were investigated using high-resolution electron microscopy, X-ray diffraction, and Rietveld analysis of time-of-flight neutron diffraction data. The phases, expressed as Ga(4-4x)In(4x)Sn(n-4)O(2n-2) (n = 6 and 7-17, odd), are intergrowths between the β-gallia structure of (Ga, In)2O3 and the rutile structure of SnO2. Samples prepared with n ≥ 9 crystallize in C2/m and are isostructural with intergrowths in the Ga2O3-TiO2 system. Samples prepared with n = 6 and n = 7 are members of an alternative intergrowth series that crystallizes in P2/m. Both intergrowth series are similar in that their members possess 1-D tunnels along the b axis. The difference between the two series is described in terms of different crystallographic shear plane operations (CSP) on the parent rutile structure. (C) 2000 Academic Press.

Original languageEnglish (US)
Pages (from-to)294-304
Number of pages11
JournalJournal of Solid State Chemistry
Issue number2
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry


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