Abstract
Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.
Original language | English (US) |
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Pages (from-to) | 376-381 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 308 |
Issue number | 2 |
DOIs | |
State | Published - Oct 15 2007 |
Keywords
- A1. Defects and interfaces
- A1. Orientation relationship
- A1. Transmission electron microscopy
- B1. Transparent conducting oxide thin films
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry