Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films

M. Zhang, D. B. Buchholz, S. J. Xie, R. P.H. Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Zn0.3In1.4Sn0.3O3-δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {5 over(5, -) 0} planes fitted well to Al2O3{3 over(3, -) 0 0} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.

Original languageEnglish (US)
Pages (from-to)376-381
Number of pages6
JournalJournal of Crystal Growth
Volume308
Issue number2
DOIs
StatePublished - Oct 15 2007

Funding

This project was supported by NREL and NSF (DMR-0071737) at the Materials Research Center of Northwestern University. The authors greatly appreciate Dr. Shuyou Li's help. TEM was performed in the EPIC facility of NUANCE Center at Northwestern University. NUANCE Center is supported by NSF-NSEC, NSF-MRSEC, Keck Foundation, the State of Illinois, and Northwestern University.

Keywords

  • A1. Defects and interfaces
  • A1. Orientation relationship
  • A1. Transmission electron microscopy
  • B1. Transparent conducting oxide thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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