Heterojonctions a dopage module Ga0,47In0,53As/InP a gaz bidimensionnel d'electrons et de trous

Translated title of the contribution: Two dimensional electron and hole gases Ga0.47In0.53As/InP modulation doped heterojunctions

Philippe Maurel*, Franck Omnes, Olivier Acher, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report a study of the transport properties of InP/Ga0.47In0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.

Translated title of the contributionTwo dimensional electron and hole gases Ga0.47In0.53As/InP modulation doped heterojunctions
Original languageFrench
Pages (from-to)213-237
Number of pages25
JournalRevue technique - Thomson-CSF
Volume20-21
Issue number2
StatePublished - Jun 1 1989

ASJC Scopus subject areas

  • Engineering(all)

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