We report a study of the transport properties of InP/Ga0.47In0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.
|Translated title of the contribution||Two dimensional electron and hole gases Ga0.47In0.53As/InP modulation doped heterojunctions|
|Number of pages||25|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Jun 1 1989|
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