Heterojonctions a dopage module Ga0,47In0,53As/InP a gaz bidimensionnel d'electrons et de trous

Philippe Maurel; Franck Omnes; Olivier Acher; Manijeh Razeghi

Heterojonctions a dopage module Ga_0,47In_0,53As/InP a gaz bidimensionnel d'electrons et de trous

Translated title of the contribution: Two dimensional electron and hole gases Ga_0.47In_0.53As/InP modulation doped heterojunctions

Philippe Maurel^*, Franck Omnes, Olivier Acher, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report a study of the transport properties of InP/Ga_0.47In_0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.

Translated title of the contribution	Two dimensional electron and hole gases Ga_0.47In_0.53As/InP modulation doped heterojunctions
Original language	French
Pages (from-to)	213-237
Number of pages	25
Journal	Revue technique - Thomson-CSF
Volume	20-21
Issue number	2
State	Published - Jun 1 1989

ASJC Scopus subject areas

Engineering(all)

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title = "Heterojonctions a dopage module Ga0,47In0,53As/InP a gaz bidimensionnel d'electrons et de trous",

abstract = "We report a study of the transport properties of InP/Ga0.47In0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.",

author = "Philippe Maurel and Franck Omnes and Olivier Acher and Manijeh Razeghi",

year = "1989",

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AU - Maurel, Philippe

AU - Omnes, Franck

AU - Acher, Olivier

AU - Razeghi, Manijeh

PY - 1989/6/1

Y1 - 1989/6/1

N2 - We report a study of the transport properties of InP/Ga0.47In0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.

AB - We report a study of the transport properties of InP/Ga0.47In0.53As modulation doped heterojunctions. A quantum Hall effect, with more than one electron subband occupied, has been observed in this system. Original physical properties, associated with multisubband transport, have been evidenced. A two-dimensional hole gas has been observed. The quantum Hall effect shows some original features which are a consequence of the valence band complexity. These structures are interesting because of their applications for microwave devices.

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JO - Revue technique - Thomson-CSF

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IS - 2

ER -

Heterojonctions a dopage module Ga0,47In0,53As/InP a gaz bidimensionnel d'electrons et de trous

Abstract

ASJC Scopus subject areas

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Heterojonctions a dopage module Ga_0,47In_0,53As/InP a gaz bidimensionnel d'electrons et de trous