Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Y. Guldner*, J. P. Vieren, P. Voisin, M. Voos, M. Razeghi, M. A. Poisson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

Original languageEnglish (US)
Pages (from-to)877-879
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number10
DOIs
StatePublished - Dec 1 1982

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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