Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Y. Guldner; J. P. Vieren; P. Voisin; M. Voos; M. Razeghi; M. A. Poisson

doi:10.1063/1.92932

Two-dimensional electron gas in a In_0.53Ga_0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Y. Guldner^*, J. P. Vieren, P. Voisin, M. Voos, M. Razeghi, M. A. Poisson

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In_0.53Ga_0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

Original language	English (US)
Pages (from-to)	877-879
Number of pages	3
Journal	Applied Physics Letters
Volume	40
Issue number	10
DOIs	https://doi.org/10.1063/1.92932
State	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.92932

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title = "Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition",

abstract = "We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.",

author = "Y. Guldner and Vieren, {J. P.} and P. Voisin and M. Voos and M. Razeghi and Poisson, {M. A.}",

year = "1982",

doi = "10.1063/1.92932",

language = "English (US)",

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pages = "877--879",

journal = "Applied Physics Letters",

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T1 - Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

AU - Guldner, Y.

AU - Vieren, J. P.

AU - Voisin, P.

AU - Voos, M.

AU - Razeghi, M.

AU - Poisson, M. A.

PY - 1982

Y1 - 1982

N2 - We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

AB - We report, from Shubnikov-de Haas and cyclotron resonance experiments, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.

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DO - 10.1063/1.92932

M3 - Article

AN - SCOPUS:0013226490

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JF - Applied Physics Letters

IS - 10

ER -

Two-dimensional electron gas in a In_0.53Ga_0.47As-InP heterojunction grown by metalorganic chemical vapor deposition

Abstract

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