TY - JOUR
T1 - Two-dimensional mineral [Pb2BiS3][AuTe2]
T2 - High-mobility charge carriers in single-atom-thick layers
AU - Fang, Lei
AU - Im, Jino
AU - Stoumpos, Konstantinos
AU - Shi, Fengyuan
AU - Dravid, Vinayak
AU - Leroux, Maxime
AU - Freeman, Arthur J
AU - Kwok, Wai Kwong
AU - Chung, Duck Young
AU - Kanatzidis, Mercouri
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/2/18
Y1 - 2015/2/18
N2 - Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm2/(V s). This material possesses an extremely large anisotropy, γ = ρc/ρab ≈ 104, comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O6+δ. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.
AB - Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm2/(V s). This material possesses an extremely large anisotropy, γ = ρc/ρab ≈ 104, comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O6+δ. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.
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U2 - 10.1021/ja5111688
DO - 10.1021/ja5111688
M3 - Article
C2 - 25612093
AN - SCOPUS:84923241379
SN - 0002-7863
VL - 137
SP - 2311
EP - 2317
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 6
ER -