Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

D. Ban; E. H. Sargent; St J. Dixon-Warren; T. Grevatt; G. Knight; G. Pakulski; A. J. SpringThorpe; R. Streater; J. K. White

doi:10.1116/1.1511211

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

D. Ban, E. H. Sargent, St J. Dixon-Warren, T. Grevatt, G. Knight, G. Pakulski, A. J. SpringThorpe, R. Streater, J. K. White

Chemistry

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to profile the carrier concentration in a multi-quantum-well (MQW) BH laser and in InP staircase structures. As such, good correlation between the nominal doping density and the SSRM measured dopant density was obtained for the BH lasers. Moreover, calibration curves were obtained from SSRM and SCM measurements performed on MBE-grown InP-staircase-doped structures.

Original language	English (US)
Pages (from-to)	2126-2132
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1511211
State	Published - Sep 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Ban, D., Sargent, E. H., Dixon-Warren, S. J., Grevatt, T., Knight, G., Pakulski, G., SpringThorpe, A. J., Streater, R., & White, J. K. (2002). Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(5), 2126-2132. https://doi.org/10.1116/1.1511211

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abstract = "Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to profile the carrier concentration in a multi-quantum-well (MQW) BH laser and in InP staircase structures. As such, good correlation between the nominal doping density and the SSRM measured dopant density was obtained for the BH lasers. Moreover, calibration curves were obtained from SSRM and SCM measurements performed on MBE-grown InP-staircase-doped structures.",

author = "D. Ban and Sargent, {E. H.} and Dixon-Warren, {St J.} and T. Grevatt and G. Knight and G. Pakulski and SpringThorpe, {A. J.} and R. Streater and White, {J. K.}",

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Ban, D, Sargent, EH, Dixon-Warren, SJ, Grevatt, T, Knight, G, Pakulski, G, SpringThorpe, AJ, Streater, R & White, JK 2002, 'Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 5, pp. 2126-2132. https://doi.org/10.1116/1.1511211

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser : Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy. / Ban, D.; Sargent, E. H.; Dixon-Warren, St J. et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5, 09.2002, p. 2126-2132.

Research output: Contribution to journal › Article › peer-review

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AU - Ban, D.

AU - Sargent, E. H.

AU - Dixon-Warren, St J.

AU - Grevatt, T.

AU - Knight, G.

AU - Pakulski, G.

AU - SpringThorpe, A. J.

AU - Streater, R.

AU - White, J. K.

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AB - Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to profile the carrier concentration in a multi-quantum-well (MQW) BH laser and in InP staircase structures. As such, good correlation between the nominal doping density and the SSRM measured dopant density was obtained for the BH lasers. Moreover, calibration curves were obtained from SSRM and SCM measurements performed on MBE-grown InP-staircase-doped structures.

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Ban D, Sargent EH, Dixon-Warren SJ, Grevatt T, Knight G, Pakulski G et al. Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 Sep;20(5):2126-2132. doi: 10.1116/1.1511211

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning capacitance microscopy

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