Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to profile the carrier concentration in a multi-quantum-well (MQW) BH laser and in InP staircase structures. As such, good correlation between the nominal doping density and the SSRM measured dopant density was obtained for the BH lasers. Moreover, calibration curves were obtained from SSRM and SCM measurements performed on MBE-grown InP-staircase-doped structures.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering