Type-II antimonide-based superlattices for the third generation infrared focal plane arrays

Manijeh Razeghi*, Edward K. Huang, Binh Minh Nguyen, Siamak Abdollahi Pour, Pierre Yves Delaunay

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

In recent years, the type-II superlattice (T2SL) material platform has seen incredible growth in the understanding of its material properties which has lead to unprecedented development in the arena of device design. Its versatility in band-structure engineering is perhaps one of the greatest hallmarks of the T2SL that other material platforms are lacking. In this paper, we discuss advantages of the T2SL, specifically the M-structure T2SL, which incorporates AlSb in the traditional InAs/GaSb superlattice. Using the M-structure, we present a new unipolar minority electron detector coined as the P-M-P, the letters which describe the composition of the device. Demonstration of this device structure with a 14μm cutoff attained a detectivity of 4×10 10 Jones (-50mV) at 77K. As device performance improves year after year with novel design contributions from the many researchers in this field, the natural progression in further enabling the ubiquitous use of this technology is to reduce cost and support the fabrication of large infrared imagers. In this paper, we also discuss the use of GaAs substrates as an enabling technology for third generation imaging on T2SLs. Despite the 7.8% lattice mismatch between the native GaSb and alternative GaAs substrates, T2SL photodiodes grown on GaAs at the MWIR and LWIR have been demonstrated at an operating temperature of 77K.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXVI
Volume7660
DOIs
StatePublished - Dec 1 2010
EventInfrared Technology and Applications XXXVI - Orlando, FL, United States
Duration: Apr 5 2010Apr 9 2010

Other

OtherInfrared Technology and Applications XXXVI
CountryUnited States
CityOrlando, FL
Period4/5/104/9/10

Keywords

  • Focal plane arrays
  • GaAs substrate
  • InAs/GaSb
  • Infrared
  • LWIR
  • M-structure
  • MWIR
  • Photodetectors
  • Third generation
  • Type-II superlattice
  • VLWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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