Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

M. Razeghi; S. Abdollahi Pour; E. K. Huang; G. Chen; A. Haddadi; B. M. Nguyen

doi:10.2478/s11772-011-0028-0

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

M. Razeghi^*, S. Abdollahi Pour, E. K. Huang, G. Chen, A. Haddadi, B. M. Nguyen

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

52 Scopus citations

Abstract

Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.

Original language	English (US)
Pages (from-to)	261-269
Number of pages	9
Journal	Opto-electronics Review
Volume	19
Issue number	3
DOIs	https://doi.org/10.2478/s11772-011-0028-0
State	Published - 2011

Keywords

InAs/GaSb
M-structure
MWIR
focal plane arrays
photodetectors
type II superlattice

ASJC Scopus subject areas

Radiation
General Materials Science
Electrical and Electronic Engineering

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10.2478/s11772-011-0028-0

Cite this

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title = "Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures",

abstract = "Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.",

keywords = "InAs/GaSb, M-structure, MWIR, focal plane arrays, photodetectors, type II superlattice",

author = "M. Razeghi and Pour, {S. Abdollahi} and Huang, {E. K.} and G. Chen and A. Haddadi and Nguyen, {B. M.}",

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doi = "10.2478/s11772-011-0028-0",

language = "English (US)",

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AU - Razeghi, M.

AU - Pour, S. Abdollahi

AU - Huang, E. K.

AU - Chen, G.

AU - Haddadi, A.

AU - Nguyen, B. M.

PY - 2011

Y1 - 2011

N2 - Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.

AB - Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.

KW - InAs/GaSb

KW - M-structure

KW - MWIR

KW - focal plane arrays

KW - photodetectors

KW - type II superlattice

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Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Abstract

Keywords

ASJC Scopus subject areas

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