Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei*, Aaron Gin, Manijeh Razeghi, Gail J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

147 Scopus citations

Abstract

We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10 10cmHz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under -40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5-6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.

Original languageEnglish (US)
Pages (from-to)3675-3677
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number19
DOIs
StatePublished - Nov 4 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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