Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei; Aaron Gin; Manijeh Razeghi; Gail J. Brown

doi:10.1063/1.1520699

Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Yajun Wei^*, Aaron Gin, Manijeh Razeghi, Gail J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

160 Scopus citations

Abstract

We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10 ¹⁰cmHz^1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under -40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5-6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.

Original language	English (US)
Pages (from-to)	3675-3677
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1520699
State	Published - Nov 4 2002

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Physics and Astronomy (miscellaneous)

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title = "Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm",

abstract = "We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10 10cmHz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under -40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5-6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.",

author = "Yajun Wei and Aaron Gin and Manijeh Razeghi and Brown, {Gail J.}",

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doi = "10.1063/1.1520699",

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T1 - Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

AU - Wei, Yajun

AU - Gin, Aaron

AU - Razeghi, Manijeh

AU - Brown, Gail J.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10 10cmHz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under -40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5-6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.

AB - We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×10 10cmHz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under -40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5-6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.

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Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm

Abstract

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