Type II InAs/GaSb superlattices and detectors with λc >18 μm

Manijeh Razeghi*, Yajun Wei, Aaron Gin, Gail J. Brown, Dan Johnstone

*Corresponding author for this work

Research output: Contribution to journalConference article

26 Scopus citations

Abstract

The authors report the most recent advances in type II InAs/GaSb superlattice materials and photovoltaic detectors. Lattice mismatch between the substrate and the superlattice has been routinely achieved below 0.1%, and less than 0.0043% as the record. The FWHM of the zeroth order peak from x-ray diffraction has been decreased below 50 arcsec and a record of less than 44 arcsec has been achieved. High performance detectors with 50% cutoff beyond 18 μm up to 26 μm have been successfully demonstrated. The detectors with a 50% cut-off wavelength of 18.8 μm showed a peak current responsivity of 4 A/W at 80 K, and a peak detectivity of 4.5×1010 cm·Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV under 300 K 2π FOV background. Some detectors showed a projected 0% cutoff wavelength up to 28 μm∼30 μm. The peak responsivity of 3 Amp/Watt and detectivity of 4.25×1010 cm×Hz1/2/W was achieved under -40 mV reverse bias at 34 K for these detectors.

Original languageEnglish (US)
Pages (from-to)111-116
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4650
DOIs
StatePublished - Jan 1 2002
EventPhotodetector Materials and Devices VII - San Jose, CA, United States
Duration: Jan 21 2002Jan 23 2002

Keywords

  • InAs/GaSb
  • Photovoltaic
  • Superlattices
  • Type II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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