Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs

Manijeh Razeghi*, Yajun Wei, Junjik Bae, Aaron Gin, Andrew Hood, Jutao Jiang, Jongbum Nah

*Corresponding author for this work

Research output: Contribution to journalConference article

36 Scopus citations

Abstract

The authors report the most recent progress in Type II InAs/GaSb superlattice materials and photovoltaic detectors developed for focal plane array applications with a cutoff wavelength of ∼8 μm. No turn-on of tunneling current was observed even at a reverse bias of-3 V for a 3 μm thick p-i-n photodiodes. The thermally-limited zero bias detectivity under 300 K 2 π FOV was 2 ∼3 × 10 11 cm.Hz 1/2/W at liquid nitrogen temperature, with a current responsivity of 2 ∼3 A/W and a mean quantum efficiency of ∼50%. Initial passivation using SiO 2 has shown to decrease the dark current by ∼30% at a reverse bias of -1 V. The same detector structure was used for focal plane arrays with silicon readout integrated circuit. Concept proof of imaging was demonstrated with a format of 256 × 256 at liquid nitrogen temperature.

Original languageEnglish (US)
Pages (from-to)501-511
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5246
DOIs
StatePublished - Dec 1 2003
EventActive and Passive Optical Components for WDM Communications III - Orlando, FL, United States
Duration: Sep 8 2003Sep 11 2003

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • Photodiode
  • Photovoltaic
  • Superlattices
  • Type II

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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