TY - GEN
T1 - Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors
T2 - Quantum Sensing and Nano Electronics and Photonics XV 2018
AU - Haddadi, Abbas
AU - Dehzangi, Arash
AU - Chevallier, Romain
AU - Yang, Thomas
AU - Razeghi, Manijeh
N1 - Publisher Copyright:
© 2018 SPIE.
PY - 2018
Y1 - 2018
N2 - Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e-SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm.
AB - Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability. In contrast, type-II superlattices (T2SLs) are a developing new material system with intrinsic advantages such as great flexibility in bandgap engineering, low growth and manufacturing cost, high-uniformity, auger recombination suppression, and high carrier effective mass that are becoming an attractive candidate for infrared detection and imaging from short-wavelength infrared to very long wavelength infrared regime. We present the recent advancements in T2SL-based heterojunction phototransistors in e-SWIR, MWIR and LWIR spectral ranges. A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Then, we present the effect of vertical scaling on the optical and electrical performance of heterojunction phototransistors, where the performance of devices with different base width was compared as the base was scaled from 60 down to 40 nm.
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U2 - 10.1117/12.2297475
DO - 10.1117/12.2297475
M3 - Conference contribution
AN - SCOPUS:85050235124
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Quantum Sensing and Nano Electronics and Photonics XV
A2 - Leo, Giuseppe
A2 - Brown, Gail J.
A2 - Razeghi, Manijeh
A2 - Lewis, Jay S.
PB - SPIE
Y2 - 28 January 2018 through 2 February 2018
ER -