Type-II "M" structure photodiodes: An alternative material design for mid-wave to long wavelength infrared regimes

B. M. Nguyen*, Manijeh Razeghi, V. Nathan, Gail J. Brown

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

68 Scopus citations

Abstract

In this work, an AlSb-containing Type II InAs/GaSb superlattice, the so-called M-structure, is presented as a candidate for mid and long wavelength infrared detection devices. The effect of inserting an AlSb barrier in the GaSb layer is discussed and predicts many promising properties relevant to practical use. A good agreement between the theoretical calculation based on Empirical Tight Binding Method framework and experimental results is observed, showing the feasibility of the structure and its properties. A band gap engineering method without material stress constraint is proposed.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices IV
DOIs
StatePublished - May 24 2007
EventQuantum Sensing and Nanophotonic Devices IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6479
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices IV
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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