TY - JOUR
T1 - Type-II superlattice-based heterojunction phototransistors for high speed applications
AU - Li, Jiakai
AU - Dehzangi, Arash
AU - Wu, Donghai
AU - McClintock, Ryan
AU - Razeghi, Manijeh
N1 - Funding Information:
This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Agreement No. FA8650-18-1-7810 and partially supported by NASA Contract No. 80NSSC18C0170. The authors would like to acknowledge the support and encouragement of Dr. Whitney Mason from DARPA, Dr. Murzy Jhabvala from NASA Goddard Space Flight Center, Dr. Meimei Tidrow from the U.S. Army Night Vision Laboratory, Dr. Michael Gerhold from the U.S. Army Research Office, Dr. Shanee Pacley and Dr. Gail J. Brown from the U.S. Air Force Research Laboratory.
PY - 2020/8
Y1 - 2020/8
N2 - In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.
AB - In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.
KW - Heterojunction phototransistors
KW - High speed
KW - Infrared photodetectors
KW - Type-II superlattice
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U2 - 10.1016/j.infrared.2020.103350
DO - 10.1016/j.infrared.2020.103350
M3 - Article
AN - SCOPUS:85085521489
VL - 108
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
SN - 1350-4495
M1 - 103350
ER -