Abstract
In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.
Original language | English (US) |
---|---|
Article number | 103350 |
Journal | Infrared Physics and Technology |
Volume | 108 |
DOIs | |
State | Published - Aug 2020 |
Keywords
- Heterojunction phototransistors
- High speed
- Infrared photodetectors
- Type-II superlattice
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics