Type-II superlattice-based heterojunction phototransistors for high speed applications

Jiakai Li; Arash Dehzangi; Donghai Wu; Ryan McClintock; Manijeh Razeghi

doi:10.1016/j.infrared.2020.103350

Type-II superlattice-based heterojunction phototransistors for high speed applications

Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.

Original language	English (US)
Article number	103350
Journal	Infrared Physics and Technology
Volume	108
DOIs	https://doi.org/10.1016/j.infrared.2020.103350
State	Published - Aug 2020

Keywords

Heterojunction phototransistors
High speed
Infrared photodetectors
Type-II superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.infrared.2020.103350

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title = "Type-II superlattice-based heterojunction phototransistors for high speed applications",

abstract = "In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.",

keywords = "Heterojunction phototransistors, High speed, Infrared photodetectors, Type-II superlattice",

author = "Jiakai Li and Arash Dehzangi and Donghai Wu and Ryan McClintock and Manijeh Razeghi",

note = "Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Agreement No. FA8650-18-1-7810 and partially supported by NASA Contract No. 80NSSC18C0170. The authors would like to acknowledge the support and encouragement of Dr. Whitney Mason from DARPA, Dr. Murzy Jhabvala from NASA Goddard Space Flight Center, Dr. Meimei Tidrow from the U.S. Army Night Vision Laboratory, Dr. Michael Gerhold from the U.S. Army Research Office, Dr. Shanee Pacley and Dr. Gail J. Brown from the U.S. Air Force Research Laboratory. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = aug,

doi = "10.1016/j.infrared.2020.103350",

language = "English (US)",

volume = "108",

journal = "Infrared Physics",

issn = "1350-4495",

publisher = "Elsevier",

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T1 - Type-II superlattice-based heterojunction phototransistors for high speed applications

AU - Li, Jiakai

AU - Dehzangi, Arash

AU - Wu, Donghai

AU - McClintock, Ryan

AU - Razeghi, Manijeh

N1 - Funding Information: This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Agreement No. FA8650-18-1-7810 and partially supported by NASA Contract No. 80NSSC18C0170. The authors would like to acknowledge the support and encouragement of Dr. Whitney Mason from DARPA, Dr. Murzy Jhabvala from NASA Goddard Space Flight Center, Dr. Meimei Tidrow from the U.S. Army Night Vision Laboratory, Dr. Michael Gerhold from the U.S. Army Research Office, Dr. Shanee Pacley and Dr. Gail J. Brown from the U.S. Air Force Research Laboratory. Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/8

Y1 - 2020/8

N2 - In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.

AB - In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.

KW - Heterojunction phototransistors

KW - High speed

KW - Infrared photodetectors

KW - Type-II superlattice

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JO - Infrared Physics

JF - Infrared Physics

SN - 1350-4495

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Type-II superlattice-based heterojunction phototransistors for high speed applications

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Keywords

ASJC Scopus subject areas

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