Type-II superlattice-based heterojunction phototransistors for high speed applications

Jiakai Li, Arash Dehzangi, Donghai Wu, Ryan McClintock, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this study, high speed performance of heterojunction phototransistors (HPTs) based on InAs/GaSb/AlSb type-II superlattice with 30 nm base thickness and 50% cut-off wavelength of 2.0 μm at room temperature are demonstrated. We studied the relationship between −3 dB cut-off frequency of these HPT versus mesa size, applied bias, and collector layer thickness. For 8 μm diameter circular mesas HPT devices with a 0.5 μm collector layer, under 20 V applied bias voltage, we achieved a −3 dB cut-off frequency of 2.8 GHz.

Original languageEnglish (US)
Article number103350
JournalInfrared Physics and Technology
Volume108
DOIs
StatePublished - Aug 2020

Keywords

  • Heterojunction phototransistors
  • High speed
  • Infrared photodetectors
  • Type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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