TY - GEN
T1 - Type II superlattice infrared detectors and focal plane arrays
AU - Nathan, Vaidya
AU - Razeghi, Manijeh
PY - 2007
Y1 - 2007
N2 - Type II superlattce photodetectors have recently experienced significant improvements in both theoretical structure design and experimental realization. Empirical Tight Binding Method is initiated and developed for Type II superlattice. Growth characteristics such as group V segregation and incorporation phenomena are taken into account in the model and shown higher precision. A new Type II structure, called M-structure, is introduced and theoretically demonstrated high RoA, high quantum efficiency. Device design is optimized to improve the performance. As a result, 55% quantum efficiency and 10 Ohm.cm 2 RoA are achieved for an 11.7 μm cut-off photodetector at 77K. FPA imaging at longwavelength is demonstrated with a capability of imaging up to 171K. At 81K, the noise equivalent temperature difference presented a peak at 0.33K.
AB - Type II superlattce photodetectors have recently experienced significant improvements in both theoretical structure design and experimental realization. Empirical Tight Binding Method is initiated and developed for Type II superlattice. Growth characteristics such as group V segregation and incorporation phenomena are taken into account in the model and shown higher precision. A new Type II structure, called M-structure, is introduced and theoretically demonstrated high RoA, high quantum efficiency. Device design is optimized to improve the performance. As a result, 55% quantum efficiency and 10 Ohm.cm 2 RoA are achieved for an 11.7 μm cut-off photodetector at 77K. FPA imaging at longwavelength is demonstrated with a capability of imaging up to 171K. At 81K, the noise equivalent temperature difference presented a peak at 0.33K.
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U2 - 10.1117/12.723730
DO - 10.1117/12.723730
M3 - Conference contribution
AN - SCOPUS:35649010482
SN - 0819466646
SN - 9780819466648
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Infrared Technology and Applications XXXIII
T2 - Infrared Technology and Applications XXXIII
Y2 - 9 April 2007 through 13 April 2007
ER -