Type-II superlattice photodiodes: An alternative for VLWIR detection

G. J. Brown*, S. Houston, F. Szmulowicz, K. Mahalingam, H. Haugan, Y. Wei, A. Gin, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

In the very long wavelength infrared (VLWIR) band, λ>14 microns, the detector materials are currently limited to extrinsic semiconductors. These extrinsic materials can be either heavily doped bulk semiconductor, like silicon or germanium, or a doped quantum well heterostructure. An alternative choice that provides the opportunity for higher temperature operation for VLWIR sensing is an intrinsic material based on a type-II InAs/Ga(In)Sb superlattice. There are many possible designs for these superlattices which will produce the same narrow band gap by adjusting individual layer thicknesses, indium content or substrate orientation. The infrared properties of various compositions and designs of these type-II superlattices have been studied. In the past few years, excellent results have been obtained on photoconductive and photodiode samples designed for infrared detection beyond 15 microns. An overview of the status of this material system will be presented. In addition, the latest experimental results for superlattice photodiodes with cut-off wavelengths as long as 30 microns will be covered.

Original languageEnglish (US)
Pages (from-to)191-198
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5074
StatePublished - Dec 1 2003
EventInfrared Technology and Applications XXIX - Orlando, FL, United States
Duration: Apr 21 2003Apr 25 2003

Keywords

  • Detector
  • Infrared
  • Photodiodes
  • Superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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