Abstract
Visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor based on type–II InAs/AlSb/GaSb superlattices have been demonstrated. The photodetectors are designed to have a 100% cut-off wavelength of ~2.4 μm at 300K, with sensitivity down to visible wavelengths. The photodetectors exhibit room–temperature (300K) peak responsivity of 0.6 A/W at ~1.7 μm, corresponding to a quantum efficiency of 43% at zero bias under front–side illumination, without any anti–reflection coating where the visible cut−on wavelength of the devices is <0.5 µm. With a dark current density of 5.3 × 10 −4 A/cm 2 under −20 mV applied bias at 300K, the photodetectors exhibit a specific detectivity of 4.72 × 10 10 cm·Hz 1/2 /W. At 150K, the photodetectors exhibit a dark current density of 1.8 × 10 −10 A/cm 2 and a quantum efficiency of 40%, resulting in a detectivity of 5.56 × 10 13 cm·Hz 1/2 /W.
Original language | English (US) |
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Article number | 5003 |
Journal | Scientific reports |
Volume | 9 |
Issue number | 1 |
DOIs | |
State | Published - Dec 1 2019 |
Funding
This work was partially supported by NASA contract 80NSSC18C0170 and the Defense Advanced Research Projects Agency (DARPA) under agreement number FA8650-18-1-7810. Authors would like to acknowledge the support and encouragement of Dr. Murzy Jhabvala, Chief Engineer at NASA Goddard Space Flight Center, Dr. Jay Lewis and Dr. Whitney Mason from DARPA, and Dr. Meimei Tidrow from U.S. Army Night Vision Laboratory.
ASJC Scopus subject areas
- General