Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Xinge Yu, Li Zeng, Nanjia Zhou, Peijun Guo, Fengyuan Shi, Donald B. Buchholz, Q. Ma, Junsheng Yu, Vinayak P Dravid, R P H Chang, Michael J Bedzyk*, Tobin Jay Marks, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

80 Scopus citations

Abstract

Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

Original languageEnglish (US)
Pages (from-to)2390-2399
Number of pages10
JournalAdvanced Materials
Volume27
Issue number14
DOIs
StatePublished - Apr 8 2015

Keywords

  • flexible materials
  • indium oxide
  • polymer blends
  • thin-film transistors
  • transparent electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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