Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Xinge Yu; Li Zeng; Nanjia Zhou; Peijun Guo; Fengyuan Shi; Donald B. Buchholz; Q. Ma; Junsheng Yu; Vinayak P Dravid; R P H Chang; Michael J Bedzyk; Tobin Jay Marks; Antonio Facchetti

doi:10.1002/adma.201405400

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Xinge Yu, Li Zeng, Nanjia Zhou, Peijun Guo, Fengyuan Shi, Donald B. Buchholz, Q. Ma, Junsheng Yu, Vinayak P Dravid, R P H Chang, Michael J Bedzyk^*, Tobin Jay Marks, Antonio Facchetti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

Ultra-flexible and transparent metal oxide transistors are developed by doping In₂O₃ films with poly(vinylphenole) (PVP). By adjusting the In₂O₃:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In₂O₃:5%PVP-based transistors exhibit mobilities approaching 11 cm² V^-1 s^-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

Original language	English (US)
Pages (from-to)	2390-2399
Number of pages	10
Journal	Advanced Materials
Volume	27
Issue number	14
DOIs	https://doi.org/10.1002/adma.201405400
State	Published - Apr 8 2015

Keywords

flexible materials
indium oxide
polymer blends
thin-film transistors
transparent electronics

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201405400

Cite this

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title = "Ultra-flexible, {"}invisible{"} thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends",

abstract = "Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.",

keywords = "flexible materials, indium oxide, polymer blends, thin-film transistors, transparent electronics",

author = "Xinge Yu and Li Zeng and Nanjia Zhou and Peijun Guo and Fengyuan Shi and Buchholz, {Donald B.} and Q. Ma and Junsheng Yu and Dravid, {Vinayak P} and Chang, {R P H} and Bedzyk, {Michael J} and Marks, {Tobin Jay} and Antonio Facchetti",

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language = "English (US)",

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T1 - Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

AU - Yu, Xinge

AU - Zeng, Li

AU - Zhou, Nanjia

AU - Guo, Peijun

AU - Shi, Fengyuan

AU - Buchholz, Donald B.

AU - Ma, Q.

AU - Yu, Junsheng

AU - Dravid, Vinayak P

AU - Chang, R P H

AU - Bedzyk, Michael J

AU - Marks, Tobin Jay

AU - Facchetti, Antonio

PY - 2015/4/8

Y1 - 2015/4/8

N2 - Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

AB - Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V-1 s-1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.

KW - flexible materials

KW - indium oxide

KW - polymer blends

KW - thin-film transistors

KW - transparent electronics

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ER -

Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Abstract

Keywords

ASJC Scopus subject areas

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