Ultra-high vacuum processing and characterization of chemically functionalized graphene

Qing Hua Wang, Mark C. Hersam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The chemical functionalization of graphene in ultra-high vacuum (UHV) with monolayers of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) has been characterized with scanning tunneling microscopy (STM). The molecules self-assemble into stable, well-ordered monolayers that are arranged in a herringbone phase with extended domains spanning hundreds of nanometers. At submonolayer coverage, PTCDA forms stable, isolated molecular islands. The molecular ordering is unperturbed by either defects in the epitaxial graphene or atomic steps in the underlying SiC surface. Scanning tunneling spectroscopy (STS) performed on the PTCDA monolayers reveals strong features in the electronic density of states that are distinct from the pristine graphene regions. The demonstration of robust, uniform organic functionalization of epitaxial graphene is an important step toward realizing graphene-based molecular electronic and sensing devices.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Pages95-98
Number of pages4
Edition5
DOIs
StatePublished - Dec 29 2010
Event2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 217th ECS Meeting - Vancouver, BC, Canada
Duration: Apr 26 2010Apr 29 2010

Publication series

NameECS Transactions
Number5
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period4/26/104/29/10

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Wang, Q. H., & Hersam, M. C. (2010). Ultra-high vacuum processing and characterization of chemically functionalized graphene. In Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2 (5 ed., pp. 95-98). (ECS Transactions; Vol. 28, No. 5). https://doi.org/10.1149/1.3367940