Ultracompact Multimode Interference 3-dB Coupler with Strong Lateral Confinement by Deep Dry Etching

Yong Ma*, Seoijin Park, Liwei Wang, Seng Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Extremely short InP-InGaAsP MMI 3-dB couplers (L ∼ 15-50 μm) with conventional structure have been successfully fabricated. The significant size reduction was achieved by deep dry etching and tapered access waveguide with large S-bend design. Optical transmission measurements on these devices have been performed. An optical bandwidth about 80 nm with a limit of 2-dB excess loss was obtained for most of the couplers. During the whole tunable wavelength range (λ ∼ 1485-1580 nm), the imbalance is within ±0.5 dB. Fabrication tolerance and polarization independence are also investigated and the results demonstrated the applicability of these ultracompact devices in high-density photonic integrated circuit.

Original languageEnglish (US)
Pages (from-to)492-494
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number5
DOIs
StatePublished - May 2000

Keywords

  • 3-dB coupler
  • Deep dry etching
  • Excess loss
  • Imbalance
  • InP-InGaAsP
  • Multimode interference
  • Splitting ratio

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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