Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks

Yingyan Huang; Seng-Tiong Ho

doi:10.1109/AOE.2006.307321

Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks

Yingyan Huang^*, Seng-Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50μW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5mW), ultrafast operation (10-100Gbit/s), very compact size (<10μm × 10μm per bit), addressable at bit or byte level, and monolithically integrated on InP chip.

Original language	English (US)
Title of host publication	Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006
DOIs	https://doi.org/10.1109/AOE.2006.307321
State	Published - Dec 1 2006
Event	Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006 - Shanghai, China Duration: Oct 24 2006 → Oct 24 2006

Other

Other	Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006
Country/Territory	China
City	Shanghai
Period	10/24/06 → 10/24/06

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Communication

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10.1109/AOE.2006.307321

Cite this

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title = "Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks",

abstract = "We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50μW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5mW), ultrafast operation (10-100Gbit/s), very compact size (<10μm × 10μm per bit), addressable at bit or byte level, and monolithically integrated on InP chip.",

author = "Yingyan Huang and Seng-Tiong Ho",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/AOE.2006.307321",

language = "English (US)",

isbn = "0978921704",

booktitle = "Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006",

note = "Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006 ; Conference date: 24-10-2006 Through 24-10-2006",

}

Huang, Y & Ho, S-T 2006, Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks. in Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006., 4100031, Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006, Shanghai, China, 10/24/06. https://doi.org/10.1109/AOE.2006.307321

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T1 - Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks

AU - Huang, Yingyan

AU - Ho, Seng-Tiong

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50μW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5mW), ultrafast operation (10-100Gbit/s), very compact size (<10μm × 10μm per bit), addressable at bit or byte level, and monolithically integrated on InP chip.

AB - We present a novel ultrafast all-optical memory scheme that has the potential to meet the demanding requirement for 100Gb/s all-optical data storage. The all-optical memory integrates an all-optical ring resonator flip-flop with an innovative GMCI (gain manipulation of coupler interference) based all-optical switch for ultrafast READ and WRITE. The potential device performance advantages include very low operating power for the memory element (<50μW per bit), low read-write power for the GMCI based all-optical switch (<0.5-5mW), ultrafast operation (10-100Gbit/s), very compact size (<10μm × 10μm per bit), addressable at bit or byte level, and monolithically integrated on InP chip.

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M3 - Conference contribution

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BT - Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006

T2 - Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE 2006

Y2 - 24 October 2006 through 24 October 2006

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Ultrafast bit and byte addressing of all-optical memory based on microring resonators for next-generation optical networks

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