Ultrafast dynamics of InAs/GaAs quantum dot microdisk lasers

H. Cao, K. J. Luo, J. Y. Xu, Y. Ma, G. S. Chang, S. T. Ho, G. S. Solomon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. In order to improve the speed of microdisk lasers, the carrier diffusion process must be eliminated. Very recently, lasing has been achieved in InAs quantum dot (QD) embedded microdisk cavities. We report our experimental study of the dynamic response of microdisk lasers with quantum dots as the active media. In a QD microdisk laser, the carrier diffusion in the disk plane is suppressed because the carriers are confined in individual quantum dots. Hence, the turn-on time of a QD microdisk laser is greatly shortened, e.g., it can be as short as 7.8 ps at 5 K. Furthermore, we observed that the turn-on time increases as the pump power approaches the lasing threshold. This phenomenon is not easy to be observed in a QW microdisk laser due to carrier diffusion effect. The dynamics of the QD microdisk lasers has also been studied over a wide temperature range from 5 to 120 K. Under the same pumping level, the turn-on time appears to decrease with increasing temperature. This behavior may be a result of faster carrier capture and relaxation processes in quantum dots at higher temperatures.

Original languageEnglish (US)
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)155752663X, 9781557526632
DOIs
StatePublished - Jan 1 2001
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: May 6 2001May 11 2001

Publication series

NameTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
CountryUnited States
CityBaltimore
Period5/6/015/11/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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