Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode

Like Zhang, Bin Fang, Jialin Cai, Mario Carpentieri, Vito Puliafito, Francesca Garescì, Pedram Khalili Amiri, Giovanni Finocchio*, Zhongming Zeng

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Microwave detection has a huge number of applications in physics and engineering. It has already been shown that biased spin torque diodes have performance overcoming the CMOS counterpart in terms of sensitivity. In this regard, the spin torque diodes are promising candidates for the next generation of microwave detectors. Here, we show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kΩ while maintaining the advantages over other mechanisms such as vortex expulsion or non-linear resonance, to work without a bias magnetic field.

Original languageEnglish (US)
Article number102401
JournalApplied Physics Letters
Volume113
Issue number10
DOIs
StatePublished - Sep 3 2018

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ultrahigh detection sensitivity exceeding 10<sup>5</sup> V/W in spin-torque diode'. Together they form a unique fingerprint.

  • Cite this

    Zhang, L., Fang, B., Cai, J., Carpentieri, M., Puliafito, V., Garescì, F., Amiri, P. K., Finocchio, G., & Zeng, Z. (2018). Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode. Applied Physics Letters, 113(10), [102401]. https://doi.org/10.1063/1.5047547