Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode

Like Zhang; Bin Fang; Jialin Cai; Mario Carpentieri; Vito Puliafito; Francesca Garescì; Pedram Khalili Amiri; Giovanni Finocchio; Zhongming Zeng

doi:10.1063/1.5047547

Ultrahigh detection sensitivity exceeding 10⁵ V/W in spin-torque diode

Like Zhang, Bin Fang, Jialin Cai, Mario Carpentieri, Vito Puliafito, Francesca Garescì, Pedram Khalili Amiri, Giovanni Finocchio^*, Zhongming Zeng

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article

19 Scopus citations

Abstract

Microwave detection has a huge number of applications in physics and engineering. It has already been shown that biased spin torque diodes have performance overcoming the CMOS counterpart in terms of sensitivity. In this regard, the spin torque diodes are promising candidates for the next generation of microwave detectors. Here, we show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kΩ while maintaining the advantages over other mechanisms such as vortex expulsion or non-linear resonance, to work without a bias magnetic field.

Original language	English (US)
Article number	102401
Journal	Applied Physics Letters
Volume	113
Issue number	10
DOIs	https://doi.org/10.1063/1.5047547
State	Published - Sep 3 2018

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5047547

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Zhang, L., Fang, B., Cai, J., Carpentieri, M., Puliafito, V., Garescì, F., Amiri, P. K., Finocchio, G., & Zeng, Z. (2018). Ultrahigh detection sensitivity exceeding 10⁵ V/W in spin-torque diode. Applied Physics Letters, 113(10), [102401]. https://doi.org/10.1063/1.5047547

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AU - Garescì, Francesca

AU - Amiri, Pedram Khalili

AU - Finocchio, Giovanni

AU - Zeng, Zhongming

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