@article{1f2832c8d0fd4a4a9bb598a9dba9934a,
title = "Ultrahigh detection sensitivity exceeding 105 V/W in spin-torque diode",
abstract = "Microwave detection has a huge number of applications in physics and engineering. It has already been shown that biased spin torque diodes have performance overcoming the CMOS counterpart in terms of sensitivity. In this regard, the spin torque diodes are promising candidates for the next generation of microwave detectors. Here, we show that the optimization of the rectification process based on the injection locking mechanism gives an ultrahigh sensitivity exceeding 200 kV/W with an output resistance below 1 kΩ while maintaining the advantages over other mechanisms such as vortex expulsion or non-linear resonance, to work without a bias magnetic field.",
author = "Like Zhang and Bin Fang and Jialin Cai and Mario Carpentieri and Vito Puliafito and Francesca Garesc{\`i} and Amiri, {Pedram Khalili} and Giovanni Finocchio and Zhongming Zeng",
note = "Funding Information: This work was supported by the Executive Programme of Scientific and Technological Cooperation Between Italy and China for the years 2016-2018 (code CN16GR09, 2016YFE0104100) titled “Nanoscale broadband spin-transfer-torque microwave detector” funded by the Ministero degli Affari Esteri e della Cooperazione Internazionale. This work was supported in part by the National Science Foundation of China (Nos. 51761145025 and 11474311) and the National Postdoctoral Program for Innovative Talents (No. BX201700275). The authors thank Steven Louis from Oakland University for his help and useful discussions. Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = sep,
day = "3",
doi = "10.1063/1.5047547",
language = "English (US)",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}