Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors

Benjamin Nketia-Yawson, Seok Ju Kang, Grace Dansoa Tabi, Andrea Perinot, Mario Caironi, Antonio Facchetti, Yong Young Noh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

Researchers report a solid-state electrolyte gate insulators (SEGIs) medium formed by a controlled blend consisting of the high-k polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and the ion gel based on poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) with [EMIM][TFSI], achieving remarkable FET performance in top gate/bottom contacts (TGBC) devices for an ample set of common conjugated polymers. The engineered SEGIs enable large charge-carrier mobilities owing to the formation of a robust gate electrode and gate dielectric interface due to the solid-state nature of the dielectric film and an enhanced charge-carrier density in the transistor channel thanks to the high-k polymer component and the facile movement of well-dispersed ions in the gate dielectric layer, allowing high capacitance values of >4 &F cm-2 to be achieved.

Original languageEnglish (US)
Article number1605685
JournalAdvanced Materials
Volume29
Issue number16
DOIs
StatePublished - Apr 25 2017

Keywords

  • conjugated polymers
  • electrolyte-gated transistors
  • fluorinated dielectrics
  • polymer blends
  • solid-state electrolytes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors'. Together they form a unique fingerprint.

Cite this