Ultrahigh Vacuum Microscopy of the Si(111) Boron √3x√3√R30° Surface

Laurence Marks, R. Ai, S. Savage, J. P. Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The intensities of the diffraction spots for the boron induced √3X√3R30° Si (111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7x7 surface.

Original languageEnglish (US)
Pages (from-to)469-473
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume11
Issue number3
DOIs
StatePublished - Jan 1 1993

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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