Ultrahigh Vacuum Microscopy of the Si(111) Boron √3x√3√R30° Surface

L. D. Marks; R. Ai; S. Savage; J. P. Zhang

doi:10.1116/1.578758

Ultrahigh Vacuum Microscopy of the Si(111) Boron √3x√3√R30° Surface

L. D. Marks, R. Ai, S. Savage, J. P. Zhang

CCSS - Center for Catalysis and Surface Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The intensities of the diffraction spots for the boron induced √3X√3R30° Si (111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7x7 surface.

Original language	English (US)
Pages (from-to)	469-473
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	11
Issue number	3
DOIs	https://doi.org/10.1116/1.578758
State	Published - May 1993

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The intensities of the diffraction spots for the boron induced √3X√3R30° Si (111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7x7 surface.",

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AU - Zhang, J. P.

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N2 - The intensities of the diffraction spots for the boron induced √3X√3R30° Si (111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7x7 surface.

AB - The intensities of the diffraction spots for the boron induced √3X√3R30° Si (111) reconstruction in a bulk electron microscope sample examined in ultrahigh vacuum are compared with the results of multislice simulations. The intensities of the spots support the relaxed S5 model. We rule out the existence of any subsurface structure such as the stacking faults present in the Si(111) 7x7 surface.

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Ultrahigh Vacuum Microscopy of the Si(111) Boron √3x√3√R30° Surface

Abstract

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