Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance

Chenchen Wang, Jonathan Rivnay, Scott Himmelberger, Kiarash Vakhshouri, Michael F. Toney, Enrique D. Gomez, Alberto Salleo*

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.

Original languageEnglish (US)
Pages (from-to)2342-2346
Number of pages5
JournalACS Applied Materials and Interfaces
Volume5
Issue number7
DOIs
StatePublished - Apr 10 2013

Keywords

  • charge transport
  • conjugated polymers
  • interface
  • organic electronics
  • thin-film-transistors

ASJC Scopus subject areas

  • Materials Science(all)

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    Wang, C., Rivnay, J., Himmelberger, S., Vakhshouri, K., Toney, M. F., Gomez, E. D., & Salleo, A. (2013). Ultrathin body poly(3-hexylthiophene) transistors with improved short-channel performance. ACS Applied Materials and Interfaces, 5(7), 2342-2346. https://doi.org/10.1021/am3027103