Abstract
Carbon nitride films were grown on silicon and hard disk substrates using pulsed dc magnetron sputtering in a single cathode deposition system. Substrates were mounted on a specially designed rotating holder that allowed 45° tilt angle and substrate rotation about the surface normal up to 20 rpm. AFM scans over 10×10 μm2 showed that 50 nm thick CN X films prepared under optimum substrate bias conditions have r.m.s. surface roughness almost four times lower than those prepared without substrate tilt and rotation. We observed a two-fold reduction in corrosion damage for hard disk substrates with 1 nm CNX overcoats deposited with substrate tilt and rotation. This improved performance is likely a result of more efficient and uniform momentum transfer parallel to the surface during deposition in this configuration.
Original language | English (US) |
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Pages | 61-64 |
Number of pages | 4 |
State | Published - Dec 1 2003 |
Event | STLE/ASME Joint International Tribology Conference and Exhibition - San Francisco, CA, United States Duration: Oct 21 2001 → Oct 24 2001 |
Other
Other | STLE/ASME Joint International Tribology Conference and Exhibition |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 10/21/01 → 10/24/01 |
ASJC Scopus subject areas
- Engineering(all)