Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao; Y. G. Zhao; H. C. Ong; S. T. Ho; J. Y. Dai; J. Y. Wu; R. P.H. Chang

doi:10.1063/1.122853

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao^*, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, R. P.H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

514 Scopus citations

Abstract

A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.

Original language	English (US)
Pages (from-to)	3656-3658
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	25
DOIs	https://doi.org/10.1063/1.122853
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122853

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title = "Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films",

abstract = "A semiconductor laser whose cavities are {"}self-formed{"} due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.",

author = "H. Cao and Zhao, {Y. G.} and Ong, {H. C.} and Ho, {S. T.} and Dai, {J. Y.} and Wu, {J. Y.} and Chang, {R. P.H.}",

year = "1998",

doi = "10.1063/1.122853",

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volume = "73",

pages = "3656--3658",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

AU - Cao, H.

AU - Zhao, Y. G.

AU - Ong, H. C.

AU - Ho, S. T.

AU - Dai, J. Y.

AU - Wu, J. Y.

AU - Chang, R. P.H.

PY - 1998

Y1 - 1998

N2 - A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.

AB - A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.

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U2 - 10.1063/1.122853

DO - 10.1063/1.122853

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EP - 3658

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

Abstract

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