Ultraviolet light-densified oxide-organic self-assembled dielectrics: Processing thin-film transistors at room temperature

Wei Huang, Xinge Yu*, Li Zeng, Binghao Wang, Atsuro Takai, Gabriele Di Carlo, Michael J. Bedzyk, Tobin J. Marks, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Low-temperature, solution-processable, high-capacitance, and low-leakage gate dielectrics are of great interest for unconventional electronics. Here, we report a near room temperature ultraviolet densification (UVD) methodology for realizing high-performance organic-inorganic zirconia self-assembled nanodielectrics (UVD-ZrSANDs). These UVD-ZrSAND multilayers are grown from solution in ambient, densified by UV radiation, and characterized by X-ray reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance measurements. The resulting UVD-ZrSAND films exhibit large capacitances of >700 nF/cm2 and low leakage current densities of <10-7 A/cm2, which rival or exceed those synthesized by traditional thermal methods. Both the p-type organic semiconductor pentacene and the n-type metal oxide semiconductor In2O3 were used to investigate UVD-ZrSANDs as the gate dielectric in thin-film transistors, affording mobilities of 0.58 and 26.21 cm2/(V s), respectively, at a low gate voltage of 2 V. These results represent a significant advance in fabricating ultra-thin high-performance dielectrics near room temperature and should facilitate their integration into diverse electronic technologies.

Original languageEnglish (US)
Pages (from-to)3445-3453
Number of pages9
JournalACS Applied Materials and Interfaces
Volume13
Issue number2
DOIs
StatePublished - Jan 20 2021

Keywords

  • high- k dielectrics
  • low-voltage TFTs
  • room temperature oxide film growth
  • self-assembled nanodielectrics
  • ultraviolet annealing

ASJC Scopus subject areas

  • Materials Science(all)

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