Ultraviolet photonic crystal laser

X. Wu; A. Yamilov; X. Liu; S. Li; V. P. Dravid; R. P.H. Chang; H. Cao

doi:10.1063/1.1808888

Ultraviolet photonic crystal laser

X. Wu, A. Yamilov, X. Liu, S. Li, V. P. Dravid, R. P.H. Chang, H. Cao^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

138 Scopus citations

Abstract

We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.

Original language	English (US)
Pages (from-to)	3657-3659
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1808888
State	Published - Oct 25 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{def06a80fc594560a0701fb29f4b46a5,

title = "Ultraviolet photonic crystal laser",

abstract = "We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.",

author = "X. Wu and A. Yamilov and X. Liu and S. Li and Dravid, {V. P.} and Chang, {R. P.H.} and H. Cao",

note = "Funding Information: This work was supported by the National Science Foundation under the Grant no. ECS-0244457. ",

year = "2004",

month = oct,

day = "25",

doi = "10.1063/1.1808888",

language = "English (US)",

volume = "85",

pages = "3657--3659",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Ultraviolet photonic crystal laser

AU - Wu, X.

AU - Yamilov, A.

AU - Liu, X.

AU - Li, S.

AU - Dravid, V. P.

AU - Chang, R. P.H.

AU - Cao, H.

N1 - Funding Information: This work was supported by the National Science Foundation under the Grant no. ECS-0244457.

PY - 2004/10/25

Y1 - 2004/10/25

N2 - We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.

AB - We fabricated two-dimensional photonic crystal structures in zinc oxide films with focused-ion-beam etching. Lasing is realized in the near-ultraviolet frequency at room temperature under optical pumping. From the measurement of lasing frequency and spatial profile of the lasing modes, as well as the photonic band structure calculation, we conclude that lasing occurs in the strongly localized defect modes near the edges of photonic band gap. These defect modes originate from the structure disorder unintentionally introduced during the fabrication process.

UR - http://www.scopus.com/inward/record.url?scp=9744237274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9744237274&partnerID=8YFLogxK

U2 - 10.1063/1.1808888

DO - 10.1063/1.1808888

M3 - Article

AN - SCOPUS:9744237274

VL - 85

SP - 3657

EP - 3659

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -