Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

P. M. Lundquist; W. P. Lin; Z. Y. Xu; G. K. Wong; E. D. Rippert; J. A. Helfrich; J. B. Ketterson

doi:10.1063/1.112134

Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

P. M. Lundquist^*, W. P. Lin, Z. Y. Xu, G. K. Wong, E. D. Rippert, J. A. Helfrich, J. B. Ketterson

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Optical second harmonic generation in radio-frequency sputter-deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second-order nonlinearity χ⁽²⁾(ω) was determined to have a nonresonant background value of ∼5×10 ^-9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.

Original language	English (US)
Pages (from-to)	1085-1087
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	9
DOIs	https://doi.org/10.1063/1.112134
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films",

abstract = "Optical second harmonic generation in radio-frequency sputter-deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second-order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10 -9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.",

author = "Lundquist, {P. M.} and Lin, {W. P.} and Xu, {Z. Y.} and Wong, {G. K.} and Rippert, {E. D.} and Helfrich, {J. A.} and Ketterson, {J. B.}",

year = "1994",

doi = "10.1063/1.112134",

language = "English (US)",

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T1 - Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

AU - Lundquist, P. M.

AU - Lin, W. P.

AU - Xu, Z. Y.

AU - Wong, G. K.

AU - Rippert, E. D.

AU - Helfrich, J. A.

AU - Ketterson, J. B.

PY - 1994

Y1 - 1994

N2 - Optical second harmonic generation in radio-frequency sputter-deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second-order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10 -9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.

AB - Optical second harmonic generation in radio-frequency sputter-deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second-order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10 -9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

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