Ultraviolet second harmonic generation in radio-frequency sputter-deposited aluminum nitride thin films

P. M. Lundquist*, W. P. Lin, Z. Y. Xu, G. K. Wong, E. D. Rippert, J. A. Helfrich, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Optical second harmonic generation in radio-frequency sputter-deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second-order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10 -9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.

Original languageEnglish (US)
Pages (from-to)1085-1087
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number9
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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