Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

H. Mohseni; J. Wojkowski; M. Razeghi; G. Brown; W. Mitchel

doi:10.1109/3.772173

Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

H. Mohseni^*, J. Wojkowski, M. Razeghi, G. Brown, W. Mitchel

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3×10⁸ cm·Hz^1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration.

Original language	English (US)
Pages (from-to)	1041-1044
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/3.772173
State	Published - Jul 1999

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window",

abstract = "We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3×108 cm·Hz1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration.",

author = "H. Mohseni and J. Wojkowski and M. Razeghi and G. Brown and W. Mitchel",

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T1 - Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

AU - Mohseni, H.

AU - Wojkowski, J.

AU - Razeghi, M.

AU - Brown, G.

AU - Mitchel, W.

PY - 1999/7

Y1 - 1999/7

N2 - We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3×108 cm·Hz1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration.

AB - We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3×108 cm·Hz1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration.

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Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

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