Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

H. Mohseni*, J. Wojkowski, M. Razeghi, G. Brown, W. Mitchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

We report on the growth and characterization of type-II infrared detectors with an InAs-GaSb superlattice active layer for the 8-12-μm atmospheric window at 300 K. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. Photoconductive detectors fabricated from the superlattices showed 80% cutoff at about 12 μm at room temperature. The responsivity of the device is about 2 mA/W with a 1-V bias (E = 5 V/cm) and the maximum measured detectivity of the device is 1.3×108 cm·Hz1/2/W at 11 μm at room temperature. The detector shows very weak temperature sensitivity. Also, the extracted effective carrier lifetime, τ = 26 ns, is an order of magnitude longer than the carrier lifetime in HgCdTe with similar bandgap and carrier concentration.

Original languageEnglish (US)
Pages (from-to)1041-1044
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume35
Issue number7
DOIs
StatePublished - Jul 1999

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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