Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range

Yajun Wei; Andrew Hood; Haiping Yau; Aaron Gin; Manijeh Razeghi; Meimei Z. Tidrow; Vaidya Nathan

doi:10.1063/1.1947908

Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range

Yajun Wei, Andrew Hood, Haiping Yau, Aaron Gin, Manijeh Razeghi, Meimei Z. Tidrow, Vaidya Nathan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

136 Scopus citations

Abstract

We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature.

Original language	English (US)
Article number	233106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	23
DOIs	https://doi.org/10.1063/1.1947908
State	Published - Jun 6 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{1e78bfbc01224fa2a0bd5aac5b4561e6,

title = "Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range",

abstract = "We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature.",

author = "Yajun Wei and Andrew Hood and Haiping Yau and Aaron Gin and Manijeh Razeghi and Tidrow, {Meimei Z.} and Vaidya Nathan",

year = "2005",

month = jun,

day = "6",

doi = "10.1063/1.1947908",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range

AU - Wei, Yajun

AU - Hood, Andrew

AU - Yau, Haiping

AU - Gin, Aaron

AU - Razeghi, Manijeh

AU - Tidrow, Meimei Z.

AU - Nathan, Vaidya

PY - 2005/6/6

Y1 - 2005/6/6

N2 - We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature.

AB - We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature.

UR - http://www.scopus.com/inward/record.url?scp=21244477890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244477890&partnerID=8YFLogxK

U2 - 10.1063/1.1947908

DO - 10.1063/1.1947908

M3 - Article

AN - SCOPUS:21244477890

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233106

ER -

Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range

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