Abstract
We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAsGaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5 μm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1 AW. Detectivity was measured around 109 cm Hz12 W at room temperature and 1.5× 1013 cm Hz12 W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier-Stark oscillations in the Zener tunneling current were observed up to room temperature.
Original language | English (US) |
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Article number | 233106 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 23 |
DOIs | |
State | Published - Jun 6 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)