TY - JOUR
T1 - Universal size-dependent trend in auger recombination in direct-gap and indirect-gap semiconductor nanocrystals
AU - Robel, István
AU - Gresback, Ryan
AU - Kortshagen, Uwe
AU - Schaller, Richard D.
AU - Klimov, Victor I.
PY - 2009/5/1
Y1 - 2009/5/1
N2 - We report the first experimental observation of a striking convergence of Auger recombination rates in nanocrystals of both direct- (InAs, PbSe, CdSe) and indirect-gap (Ge) semiconductors, which is in contrast to a dramatic difference (by up to 4-5 orders of magnitude) in the Auger decay rates in respective bulk solids. To rationalize this finding, we invoke the effect of confinement-induced mixing between states with different translational momenta, which diminishes the impact of the bulk-semiconductor band structure on multiexciton interactions in nanocrystalline materials.
AB - We report the first experimental observation of a striking convergence of Auger recombination rates in nanocrystals of both direct- (InAs, PbSe, CdSe) and indirect-gap (Ge) semiconductors, which is in contrast to a dramatic difference (by up to 4-5 orders of magnitude) in the Auger decay rates in respective bulk solids. To rationalize this finding, we invoke the effect of confinement-induced mixing between states with different translational momenta, which diminishes the impact of the bulk-semiconductor band structure on multiexciton interactions in nanocrystalline materials.
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U2 - 10.1103/PhysRevLett.102.177404
DO - 10.1103/PhysRevLett.102.177404
M3 - Article
C2 - 19518831
AN - SCOPUS:67650320770
SN - 0031-9007
VL - 102
JO - Physical Review Letters
JF - Physical Review Letters
IS - 17
M1 - 177404
ER -