TY - JOUR
T1 - Unraveling the Role of Entropy in Thermoelectrics
T2 - Entropy-Stabilized Quintuple Rock Salt PbGeSnCdxTe3+x
AU - Liu, Yukun
AU - Xie, Hongyao
AU - Li, Zhi
AU - Zhang, Yinying
AU - Malliakas, Christos D.
AU - Al Malki, Muath
AU - Ribet, Stephanie
AU - Hao, Shiqiang
AU - Pham, Thang
AU - Wang, Yuankang
AU - Hu, Xiaobing
AU - dos Reis, Roberto
AU - Snyder, G. Jeffrey
AU - Uher, Ctirad
AU - Wolverton, Christopher
AU - Kanatzidis, Mercouri G.
AU - Dravid, Vinayak P.
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/4/19
Y1 - 2023/4/19
N2 - Entropy-engineered materials are garnering considerable attention owing to their excellent mechanical and transport properties, such as their high thermoelectric performance. However, understanding the effect of entropy on thermoelectrics remains a challenge. In this study, we used the PbGeSnCdxTe3+x family as a model system to systematically investigate the impact of entropy engineering on its crystal structure, microstructure evolution, and transport behavior. We observed that PbGeSnTe3 crystallizes in a rhombohedral structure at room temperature with complex domain structures and transforms into a high-temperature cubic structure at ∼373 K. By alloying CdTe with PbGeSnTe3, the increased configurational entropy lowers the phase-transition temperature and stabilizes PbGeSnCdxTe3+x in the cubic structure at room temperature, and the domain structures vanish accordingly. The high-entropy effect results in increased atomic disorder and consequently a low lattice thermal conductivity of 0.76 W m-1 K-1 in the material owing to enhanced phonon scattering. Notably, the increased crystal symmetry is conducive to band convergence, which results in a high-power factor of 22.4 μW cm-1 K-1. As a collective consequence of these factors, a maximum ZT of 1.63 at 875 K and an average ZT of 1.02 in the temperature range of 300-875 K were obtained for PbGeSnCd0.08Te3.08. This study highlights that the high-entropy effect can induce a complex microstructure and band structure evolution in materials, which offers a new route for the search for high-performance thermoelectrics in entropy-engineered materials.
AB - Entropy-engineered materials are garnering considerable attention owing to their excellent mechanical and transport properties, such as their high thermoelectric performance. However, understanding the effect of entropy on thermoelectrics remains a challenge. In this study, we used the PbGeSnCdxTe3+x family as a model system to systematically investigate the impact of entropy engineering on its crystal structure, microstructure evolution, and transport behavior. We observed that PbGeSnTe3 crystallizes in a rhombohedral structure at room temperature with complex domain structures and transforms into a high-temperature cubic structure at ∼373 K. By alloying CdTe with PbGeSnTe3, the increased configurational entropy lowers the phase-transition temperature and stabilizes PbGeSnCdxTe3+x in the cubic structure at room temperature, and the domain structures vanish accordingly. The high-entropy effect results in increased atomic disorder and consequently a low lattice thermal conductivity of 0.76 W m-1 K-1 in the material owing to enhanced phonon scattering. Notably, the increased crystal symmetry is conducive to band convergence, which results in a high-power factor of 22.4 μW cm-1 K-1. As a collective consequence of these factors, a maximum ZT of 1.63 at 875 K and an average ZT of 1.02 in the temperature range of 300-875 K were obtained for PbGeSnCd0.08Te3.08. This study highlights that the high-entropy effect can induce a complex microstructure and band structure evolution in materials, which offers a new route for the search for high-performance thermoelectrics in entropy-engineered materials.
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U2 - 10.1021/jacs.3c01693
DO - 10.1021/jacs.3c01693
M3 - Article
C2 - 37026697
AN - SCOPUS:85152146462
SN - 0002-7863
VL - 145
SP - 8677
EP - 8688
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 15
ER -