Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films

Robert L. Kauffman*, L. C. Feldman, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Thin plasma grown films of GaAs oxides and GaAlAs oxides have been analyzed using the combined techniques of Rutherford backscattering, ion-induced X-rays, and nuclear resonance profiling. The stoichiometries of the films have been quantitatively determined and can be combined with other Auger profiling results to characterize the films. The ion-induced X-ray technique has been checked against other measurements to determine its accuracy. For uniform films such as these the X-ray measurements can provide accurate quantitative results.

Original languageEnglish (US)
Pages (from-to)619-622
Number of pages4
JournalNuclear Instruments and Methods
Volume149
Issue number1-3
DOIs
StatePublished - 1978

ASJC Scopus subject areas

  • Medicine(all)

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