Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

D. J. Rogers; F. Hosseini Teherani; A. Ougazzaden; S. Gautier; L. Divay; A. Lusson; O. Durand; F. Wyczisk; G. Garry; T. Monteiro; M. R. Correira; M. Peres; A. Neves; D. McGrouther; J. N. Chapman; M. Razeghi

doi:10.1063/1.2770655

Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

D. J. Rogers^*, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnOc- Al2 O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c- Al2 O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

Original language	English (US)
Article number	071120
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2770655
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Rogers, D. J., Hosseini Teherani, F., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M. R., Peres, M., Neves, A., McGrouther, D., Chapman, J. N., & Razeghi, M. (2007). Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN. Applied Physics Letters, 91(7), Article 071120. https://doi.org/10.1063/1.2770655

@article{75373bc3bcf44507beeaa8dc0fdf2024,

title = "Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN",

abstract = "Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnOc- Al2 O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c- Al2 O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.",

author = "Rogers, {D. J.} and {Hosseini Teherani}, F. and A. Ougazzaden and S. Gautier and L. Divay and A. Lusson and O. Durand and F. Wyczisk and G. Garry and T. Monteiro and Correira, {M. R.} and M. Peres and A. Neves and D. McGrouther and Chapman, {J. N.} and M. Razeghi",

year = "2007",

doi = "10.1063/1.2770655",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

Rogers, DJ, Hosseini Teherani, F, Ougazzaden, A, Gautier, S, Divay, L, Lusson, A, Durand, O, Wyczisk, F, Garry, G, Monteiro, T, Correira, MR, Peres, M, Neves, A, McGrouther, D, Chapman, JN & Razeghi, M 2007, 'Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN', Applied Physics Letters, vol. 91, no. 7, 071120. https://doi.org/10.1063/1.2770655

TY - JOUR

T1 - Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

AU - Rogers, D. J.

AU - Hosseini Teherani, F.

AU - Ougazzaden, A.

AU - Gautier, S.

AU - Divay, L.

AU - Lusson, A.

AU - Durand, O.

AU - Wyczisk, F.

AU - Garry, G.

AU - Monteiro, T.

AU - Correira, M. R.

AU - Peres, M.

AU - Neves, A.

AU - McGrouther, D.

AU - Chapman, J. N.

AU - Razeghi, M.

PY - 2007

Y1 - 2007

N2 - Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnOc- Al2 O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c- Al2 O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

AB - Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnOc- Al2 O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c- Al2 O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

UR - http://www.scopus.com/inward/record.url?scp=34548020779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548020779&partnerID=8YFLogxK

U2 - 10.1063/1.2770655

DO - 10.1063/1.2770655

M3 - Article

AN - SCOPUS:34548020779

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071120

ER -

Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

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