Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

D. J. Rogers*, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, T. Monteiro, M. R. Correira, M. Peres, A. Neves, D. McGrouther, J. N. Chapman, M. Razeghi

*Corresponding author for this work

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Abstract

Continued development of GaN-based light emitting diodes is being hampered by constraints imposed by current non-native substrates. ZnO is a promising alternative substrate but it decomposes under the conditions used in conventional GaN metal organic vapor phase epitaxy (MOVPE). In this work, GaN was grown on ZnOc- Al2 O3 using low temperature/pressure MOVPE with N2 as a carrier and dimethylhydrazine as a N source. Characterization confirmed the epitaxial growth of GaN. The GaN was lifted-off the c- Al2 O3 by chemically etching away the ZnO underlayer. This approach opens up the way for bonding of the GaN onto a support of choice.

Original languageEnglish (US)
Article number071120
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
StatePublished - Aug 24 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Rogers, D. J., Hosseini Teherani, F., Ougazzaden, A., Gautier, S., Divay, L., Lusson, A., Durand, O., Wyczisk, F., Garry, G., Monteiro, T., Correira, M. R., Peres, M., Neves, A., McGrouther, D., Chapman, J. N., & Razeghi, M. (2007). Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN. Applied Physics Letters, 91(7), [071120]. https://doi.org/10.1063/1.2770655