Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

John A. Rogers, Kateri E. Paul, Rebecca J. Jackman, George M. Whitesides*

*Corresponding author for this work

Research output: Contribution to journalArticle

273 Scopus citations

Abstract

Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique.

Original languageEnglish (US)
Pages (from-to)2658-2660
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number20
DOIs
StatePublished - May 19 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field'. Together they form a unique fingerprint.

  • Cite this