Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

John A. Rogers; Kateri E. Paul; Rebecca J. Jackman; George M. Whitesides

doi:10.1063/1.118988

Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

John A. Rogers, Kateri E. Paul, Rebecca J. Jackman, George M. Whitesides^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

294 Scopus citations

Abstract

Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique.

Original language	English (US)
Pages (from-to)	2658-2660
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	20
DOIs	https://doi.org/10.1063/1.118988
State	Published - May 19 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118988

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abstract = "Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique.",

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AB - Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90-100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique.

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Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

Abstract

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