The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering