Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

Kyeong K. Lee; William A. Doolittle; April S. Brown; Gary S. May; Stuart R. Stock

doi:10.1116/1.591401

Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

Kyeong K. Lee, William A. Doolittle, April S. Brown, Gary S. May, Stuart R. Stock

Cell & Developmental Biology

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6 Scopus citations

Abstract

The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.

Original language	English (US)
Pages (from-to)	1448-1452
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591401
State	Published - May 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591401

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title = "Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy",

abstract = "The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.",

author = "Lee, {Kyeong K.} and Doolittle, {William A.} and Brown, {April S.} and May, {Gary S.} and Stock, {Stuart R.}",

year = "2000",

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Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy. / Lee, Kyeong K.; Doolittle, William A.; Brown, April S. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1448-1452.

Research output: Contribution to journal › Article › peer-review

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AU - May, Gary S.

AU - Stock, Stuart R.

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AB - The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.

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Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

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