Using statistical experimental design to investigate the role of the initial growth conditions on GaN epitaxial films grown by molecular beam epitaxy

Kyeong K. Lee, William A. Doolittle, April S. Brown, Gary S. May, Stuart R. Stock

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The initial growth stage of GaN growth directly on basal plane sapphire substrate is investigated. Statistical experimental design is used for the optimization of processes with a large number of interwoven effects. The effects of growth conditions on electrical and surface morphology are analyzed by means of Hall mobility and atomic force microscopy. The interactions between Ga flux and nitrogen power during the buffer growth are discussed.

Original languageEnglish (US)
Pages (from-to)1448-1452
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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