We have performed in situ X-ray reflectivity studies of the growth of octadecyltrichlorosilane (OTS) monolayers on oxidized Si(111) from solutions in heptane. We find that for all concentrations, the film grows through the formation of islands of vertical molecules. The coverage follows a simple Langmuir form as a function of time, except for very low concentration solutions at early times, where a time offset is required to fit the curve. We have also examined films removed from solution, and we find that rinsing removes molecules and causes the remaining molecules to tilt. Thus, samples studied using the 'interrupted growth' technique are not representative of the actual growth process.
|Original language||English (US)|
|Number of pages||9|
|Journal||Colloids and Surfaces A: Physicochemical and Engineering Aspects|
|State||Published - Feb 18 2002|
- Monolayer growth X-rays
ASJC Scopus subject areas
- Colloid and Surface Chemistry