UV photodetectors based on AlxGa1-xN grown by MOCVD

Adam Saxler; Danielle Walker; Xiaolong Zhang; Patrick Kung; J. Xu; Manijeh Razeghi

doi:10.1117/12.237697

UV photodetectors based on AlxGa1-xN grown by MOCVD

Adam Saxler^*, Danielle Walker, Xiaolong Zhang, Patrick Kung, J. Xu, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metalorganic chemical vapor deposition was used to deposit Al_xGa_1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. Al_xGa_1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	132-139
Number of pages	8
Volume	2685
ISBN (Print)	081942059X, 9780819420596
DOIs	https://doi.org/10.1117/12.237697
State	Published - 1996
Event	Photodetectors: Materials and Devices - San Jose, CA, USA Duration: Feb 1 1996 → Feb 2 1996

Other

Other	Photodetectors: Materials and Devices
City	San Jose, CA, USA
Period	2/1/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.237697

Cite this

@inproceedings{a111985cce8842308b6e42dc99b2dd87,

title = "UV photodetectors based on AlxGa1-xN grown by MOCVD",

abstract = "Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa 1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.",

author = "Adam Saxler and Danielle Walker and Xiaolong Zhang and Patrick Kung and J. Xu and Manijeh Razeghi",

year = "1996",

doi = "10.1117/12.237697",

language = "English (US)",

isbn = "081942059X",

volume = "2685",

pages = "132--139",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Photodetectors: Materials and Devices ; Conference date: 01-02-1996 Through 02-02-1996",

}

Saxler, A, Walker, D, Zhang, X, Kung, P, Xu, J & Razeghi, M 1996, UV photodetectors based on AlxGa1-xN grown by MOCVD. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2685, Society of Photo-Optical Instrumentation Engineers, pp. 132-139, Photodetectors: Materials and Devices, San Jose, CA, USA, 2/1/96. https://doi.org/10.1117/12.237697

TY - GEN

T1 - UV photodetectors based on AlxGa1-xN grown by MOCVD

AU - Saxler, Adam

AU - Walker, Danielle

AU - Zhang, Xiaolong

AU - Kung, Patrick

AU - Xu, J.

AU - Razeghi, Manijeh

PY - 1996

Y1 - 1996

N2 - Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa 1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

AB - Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa 1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029716769&partnerID=8YFLogxK

U2 - 10.1117/12.237697

DO - 10.1117/12.237697

M3 - Conference contribution

AN - SCOPUS:0029716769

SN - 081942059X

SN - 9780819420596

VL - 2685

SP - 132

EP - 139

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Photodetectors: Materials and Devices

Y2 - 1 February 1996 through 2 February 1996

ER -

UV photodetectors based on AlxGa1-xN grown by MOCVD

Abstract

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