UV photodetectors based on AlxGa1-xN grown by MOCVD

Adam Saxler*, Danielle Walker, Xiaolong Zhang, Patrick Kung, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metalorganic chemical vapor deposition was used to deposit AlxGa1-xN active layers with varying aluminum compositions on basal plane sapphire substrate. AlxGa 1-xN (x < 0.5) ultraviolet photodetectors have been fabricated and characterized with cut-off wavelengths as short as 260 nm. Carrier lifetimes on the order of 10 milliseconds were estimated from frequency dependent measurements of the responsivity.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages132-139
Number of pages8
Volume2685
ISBN (Print)081942059X, 9780819420596
DOIs
StatePublished - Jan 1 1996
EventPhotodetectors: Materials and Devices - San Jose, CA, USA
Duration: Feb 1 1996Feb 2 1996

Other

OtherPhotodetectors: Materials and Devices
CitySan Jose, CA, USA
Period2/1/962/2/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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