UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

Wei Huang, Xinming Zhuang, Ferdinand S. Melkonyan, Binghao Wang, Li Zeng, Gang Wang, Shijiao Han, Michael J. Bedzyk, Junsheng Yu*, Tobin J. Marks, Antonio Facchetti

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Scopus citations


A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV–ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO2] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO2] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Original languageEnglish (US)
Article number1701706
JournalAdvanced Materials
Issue number31
StatePublished - Aug 18 2017


  • UV–ozone
  • interface trap
  • nitrogen dioxide sensors
  • organic thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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