Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

Julian J. McMorrow, Cory D. Cress, Heather N. Arnold, Vinod K. Sangwan, Deep Jariwala, Scott W. Schmucker, Tobin J. Marks, Mark C. Hersam*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

Original languageEnglish (US)
Article number073102
JournalApplied Physics Letters
Issue number7
StatePublished - Feb 13 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors'. Together they form a unique fingerprint.

Cite this