A two-step MOCVD epitaxy technique has been recently shown to be a very promising method for a buried GaInAsP heterostructure fabrication giving a laser threshold current as low as 11 mA and CW operation up to 10 mW. The developed laser structure is specially well adapted to the characterisation by photoluminescence imaging through the technology steps. Imaging has been realized with a simple equipment consisting of an argon laser and IR camera-monitor system. Dark line defects (DLD) and dark spot defects (DSD) have been observed in the epitaxial layers. A correlation has been established between the layer photoluminescence and laser stripe electroluminescence images helping to the detection of technology problems in wafer processing. Aging results of lasers having good and bad photoluminescence image tests show the importance of DSD presence in layers.
|Original language||English (US)|
|Title of host publication||Materials Science Monographs|
|Number of pages||7|
|State||Published - Dec 1 1985|
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