VALIDATION OF MOCVD GaInAsP/InP LASER FABRICATION TECHNOLOGY STEPS BY PHOTOLUMINESCENCE IMAGING METHOD.

K. Kazmierski*, P. Hirtz, J. Ricciardi, M. Razeghi, B. De Cremoux

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A two-step MOCVD epitaxy technique has been recently shown to be a very promising method for a buried GaInAsP heterostructure fabrication giving a laser threshold current as low as 11 mA and CW operation up to 10 mW. The developed laser structure is specially well adapted to the characterisation by photoluminescence imaging through the technology steps. Imaging has been realized with a simple equipment consisting of an argon laser and IR camera-monitor system. Dark line defects (DLD) and dark spot defects (DSD) have been observed in the epitaxial layers. A correlation has been established between the layer photoluminescence and laser stripe electroluminescence images helping to the detection of technology problems in wafer processing. Aging results of lasers having good and bad photoluminescence image tests show the importance of DSD presence in layers.

Original languageEnglish (US)
Title of host publicationMaterials Science Monographs
PublisherElsevier
Pages279-285
Number of pages7
ISBN (Print)0444425586
StatePublished - Dec 1 1985

ASJC Scopus subject areas

  • Engineering(all)

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    Kazmierski, K., Hirtz, P., Ricciardi, J., Razeghi, M., & De Cremoux, B. (1985). VALIDATION OF MOCVD GaInAsP/InP LASER FABRICATION TECHNOLOGY STEPS BY PHOTOLUMINESCENCE IMAGING METHOD. In Materials Science Monographs (pp. 279-285). Elsevier.