Abstract
Nitrogen-doped gallium phosphide has been epitaxially deposited on GaP substrates by chemical vapor deposition using phosphine, hydrogen chloride, and gallium as reactants. The morphology of the epitaxial layers and the electroluminescence of the Zn-diffused diodes were investigated as a function of substrate temperature, Ga source temperature, and reactant concentration. It was found that by decreasing the PH3/GaCl ratio at which the material was grown, the electroluminescence of the diodes prepared from the material shifted to longer wavelengths as a result of increased nitrogen incorporation. Minority carrier lifetime for the n-type epitaxial material was measured by the diode reverse-recovery technique. For diffused diodes, the reciprocal of the minority carrier lifetime is directly proportional to the PH3/GaCl ratio at which the material was prepared. Possible recombination centers consistent with lifetime-ambient composition behavior are the Si-0 complex or Ga vacancy complex. Quantum efficiencies for the encapsulated yellow light emitting diodes with a mesa structure were as high as 0.15% at 20 A/cm2 and 0.24% under pulsed operation at 100 A/cm2.
Original language | English (US) |
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Pages (from-to) | 402-406 |
Number of pages | 5 |
Journal | Journal of the Electrochemical Society |
Volume | 122 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1975 |
Keywords
- electroluminescence
- gallium phosphide
- minority carrier lifetime
- vapor phase epitaxy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry