Vapor growth and properties of thin film ZnSxSe1-x

Wallace B. Leigh*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

ZnSxSe1-x has been heteroepitaxially deposited onto GaAs by hydrogen vapor transport in an open-tube reactor. ZnSxSe1-x alloy films over the entire composition range were grown and determined to be monocrystalline. The effects of reactant partial pressure and substrate temperature on alloy composition have been investigated. Capacitance-voltage measurements on Au/ZnSxSe1-x Schottky diodes indicated donor densities of the order of (0.7-20) × 1015cm-3 in films grown under zinc-rich conditions.

Original languageEnglish (US)
Pages (from-to)221-229
Number of pages9
JournalThin Solid Films
Volume97
Issue number3
DOIs
StatePublished - Nov 19 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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