Vapor growth of thin heteroepitaxial InP films on CdS

Masahide Inuishi*, Bruce W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

Original languageEnglish (US)
Pages (from-to)195-202
Number of pages8
JournalThin Solid Films
Issue number3
StatePublished - Feb 19 1982

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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