Vapor growth of thin heteroepitaxial InP films on CdS

Masahide Inuishi; Bruce W. Wessels

doi:10.1016/0040-6090(82)90047-5

Vapor growth of thin heteroepitaxial InP films on CdS

Masahide Inuishi^*, Bruce W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH₃), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 10¹⁶-4 × 10¹⁷ cm^-3.

Original language	English (US)
Pages (from-to)	195-202
Number of pages	8
Journal	Thin Solid Films
Volume	88
Issue number	3
DOIs	https://doi.org/10.1016/0040-6090(82)90047-5
State	Published - Feb 19 1982

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Vapor growth of thin heteroepitaxial InP films on CdS",

abstract = "InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.",

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AU - Wessels, Bruce W.

PY - 1982/2/19

Y1 - 1982/2/19

N2 - InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

AB - InP was heteroepitaxially deposited onto CdS single-crystal substrates by chemical vapor deposition using phosphine (PH3), HCl and indium as reactants. Single-crystalline films were deposited at substrate temperatures as low as 450°C. Scanning Auger microscopy shows that the films are InP and that formation of solid solutions between the CdS and the InP is minimal. The as-grown films are n type with residual donor densities of 4 × 1016-4 × 1017 cm-3.

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Vapor growth of thin heteroepitaxial InP films on CdS

Abstract

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