Vapor-liquid assisted chemical vapor deposition of Cu2X materials

M. Arslan Shehzad, Yea Shine Lee, Matthew Cheng, Dmitry Lebedev, Paul Masih Das, Zhangyuan Gao, Roberto dos Reis, Mark C. Hersam, Vinayak P. Dravid*, Pallab Goswami, M. Arslan Shehzad, Roberto Moreno Souza dos Reis, Xinqi Chen*, Vinayak P. Dravid*, Vinayak P Dravid*, Alexander C. Tyner, Pallab Goswami, Mark C. Hersam, Mark C. Hersam, Xinqi Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Transition metal dichalcogenides (TMDs) are known for their layered structure and tunable functional properties. However, a unified understanding on other transition metal chalcogenides (i.e. M2X) is still lacking. Here, the relatively new class of copper-based chalcogenides Cu2X (X = Te, Se, S) is thoroughly reported. Cu2X are synthesized by an unusual vapor-liquid assisted growth on a Al2O3/Cu/W stack. Liquid copper plays a significant role in synthesizing these layered systems, and sapphire assists with lateral growth and exfoliation. Similar to traditional TMDs, thickness dependent phonon signatures are observed, and high-resolution atomic images reveal the single phase Cu2Te that prefers to grow in lattice-matched layers. Charge transport measurements indicate a metallic nature at room temperature with a transition to a semiconducting nature at low temperatures accompanied by a phase transition, in agreement with band structure calculations. These findings establish a fundamental understanding and thrust Cu2Te as a flexible candidate for wide applications from photovoltaics and sensors to nanoelectronics.

Original languageEnglish (US)
Article number045013
Journal2D Materials
Issue number4
StatePublished - Oct 1 2022


  • CuTe
  • CuX
  • metal-semiconductor transition
  • vapor-liquid CVD

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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