Vapor phase epitaxy of InP using flow modulation

P. J. Wang; B. W. Wessels

doi:10.1063/1.97096

Vapor phase epitaxy of InP using flow modulation

P. J. Wang^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×10¹⁵ cm^-3 and electron mobilities of 3650 cm²/V s were achieved.

Original language	English (US)
Pages (from-to)	564-566
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	10
DOIs	https://doi.org/10.1063/1.97096
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{467d66a483fe4fb2b703467b39d9f255,

title = "Vapor phase epitaxy of InP using flow modulation",

abstract = "We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 {\AA}/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm-3 and electron mobilities of 3650 cm2/V s were achieved.",

author = "Wang, {P. J.} and Wessels, {B. W.}",

year = "1986",

doi = "10.1063/1.97096",

language = "English (US)",

volume = "49",

pages = "564--566",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

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T1 - Vapor phase epitaxy of InP using flow modulation

AU - Wang, P. J.

AU - Wessels, B. W.

PY - 1986

Y1 - 1986

N2 - We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm-3 and electron mobilities of 3650 cm2/V s were achieved.

AB - We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm-3 and electron mobilities of 3650 cm2/V s were achieved.

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U2 - 10.1063/1.97096

DO - 10.1063/1.97096

M3 - Article

AN - SCOPUS:0342675885

SN - 0003-6951

VL - 49

SP - 564

EP - 566

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Vapor phase epitaxy of InP using flow modulation

Abstract

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