We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm-3 and electron mobilities of 3650 cm2/V s were achieved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)