Vapor phase epitaxy of InP using flow modulation

P. J. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


We report the first preparation of indium phosphide using flow modulation techniques in the hydride vapor phase epitaxial system. A conventional single barrel reactor was used. Layer growth rates as low as 25 Å/cycle were demonstrated. Room-temperature carrier concentrations for the unintentionally doped InP of 5×1015 cm-3 and electron mobilities of 3650 cm2/V s were achieved.

Original languageEnglish (US)
Pages (from-to)564-566
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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