Variable-temperature electrical measurements of zinc oxide/tin oxide-cosubstituted indium oxide

A. Ambrosini, G. B. Palmer, A. Maignan, K. R. Poeppelmeier*, M. A. Lane, P. Brazis, C. R. Kannewurf, T. Hogan, T. O. Mason

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


The electrical conductivity, Hall effect, and thermoelectric coefficient of Zn/Sn-cosubstituted In2O3 (In2-2xSnxZnxO3- δ, undoped In2O3, and indium-tin oxide (ITO) were studied vs cation composition, state of reduction, and measurement temperature (over the range of 4.2-340 K). Carrier contents and mobilities were determined from the Hall coefficient and conductivity in each case. In2-2xSnxZnxO3-δ displays conductivities up to 1 order of magnitude lower than ITO, and the conductivity of the material decreases with increasing cosubstitution, from approximately 860 to 235 S/cm. Reduction of the materials under flowing H2/N2 increases their carrier concentrations and therefore their conductivities. These results are discussed in terms of possible defect and transport models.

Original languageEnglish (US)
Pages (from-to)52-57
Number of pages6
JournalChemistry of Materials
Issue number1
StatePublished - Mar 25 2002

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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